PMV213SN,215
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061310931
- Бренд
- Nexperia B.V.
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Width
- 1.4mm
- Series
- TrenchMOSв„ў ->
Цена по запросу
(от 72 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 100В, 1,9А, 2Вт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Width | 1.4mm |
| Series | TrenchMOSв„ў -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | N-Channel |
| Pin Count | 3 |
| Vgs (Max) | В±30V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 100 |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| REACH Status | REACH Unaffected |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Base Product Number | PMV213 -> |
| Transistor Material | Si |
| Transistor Polarity | N Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 500mA, 10V |
| Power Dissipation (Max) | 280mW (Tj) |
| Supplier Device Package | TO-236AB |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2 W |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V |
| Vgs - Gate-Source Voltage | 4V @ 1mA |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 100V |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 250 mΩ |
| Maximum Continuous Drain Current | 1.9 A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 250mО© @ 500mA,10V |
| Power Dissipation-Max (Ta=25В°C) | 280mW |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 20V |
| Vds - Drain-Source Breakdown Voltage | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Continuous Drain Current (Id) @ 25В°C | 1.9A |
| Current - Continuous Drain (Id) @ 25В°C | 1.9A (Tc) |