PMPB10XNEZ, 20V 9A 14m @4.5V,9A 1 N-Channel DFN2020MD-6 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061893763
- Артикул
- PMPB10XNEZ
- Бренд
- Nexperia B.V.
- Brand:
- Nexperia
- Fall Time:
- 50 ns
- Rise Time:
- 35 ns
- Вес, г
- 0.02
Цена по запросу
(от 69 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Nexperia |
| Fall Time: | 50 ns |
| Rise Time: | 35 ns |
| Вес, г | 0.02 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Package/Case: | DFN-2020MD-6 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934066863184 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 23 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 12.5 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 13 ns |
| Typical Turn-Off Delay Time: | 54 ns |
| Id - Continuous Drain Current: | 12.9 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 60 S |
| Rds On - Drain-Source Resistance: | 25 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |