PMGD280UN,115, Транзистор: N-MOSFET x2, полевой, 20В, 0,55А, 400мВт, SOT363
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- Код товара
- 8024650343
- Артикул
- PMGD280UN,115
- Бренд
- Nexperia B.V.
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Width
- 1.35mm
- Brand:
- Nexperia
Цена по запросу
(от 19,87 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET x2, полевой, 20В, 0,55А, 400мВт, SOT363 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Width | 1.35mm |
| Brand: | Nexperia |
| Series | TrenchMOSв„ў -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | 2 N-Channel (Dual) |
| Product: | MOSFET Small Signal |
| Pin Count | 6 |
| Fall Time: | 10 ns |
| Rise Time: | 10 ns |
| Вес, г | 0.02 |
| FET Feature | Logic Level Gate |
| Power - Max | 400mW |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-363 |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Mounting Type | Surface Mount |
| Package/Case: | TSSOP-6 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934057726115 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 890 pC |
| Vgs(th) (Max) @ Id | 1V @ 250ВµA |
| Структура | MOSFET |
| Base Product Number | PMGD280 -> |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 200mA, 4.5V |
| Особенности | - |
| Pd - Power Dissipation: | 400 mW |
| Supplier Device Package | 6-TSSOP |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 400 mW |
| Typical Gate Charge @ Vgs | 0.89 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 4.5 ns |
| Gate Charge (Qg) (Max) @ Vgs | 0.89nC @ 4.5V |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 18.5 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 870 mA |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.45V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 340 mΩ |
| Maximum Continuous Drain Current | 870 mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 340 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 20V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 450 mV |
| Current - Continuous Drain (Id) @ 25В°C | 870mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.55 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |