PMCXB1000UEZ, MOSFETs PMCXB1000UE/ SOT1216/DFN1010B-6
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005511399
- Артикул
- PMCXB1000UEZ
- Бренд
- Nexperia B.V.
- Brand:
- Nexperia
- Series
- -
- FET Type
- N and P-Channel Complementary
- Packaging
- Cut Tape(CT)
Цена по запросу
(от 67 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторная матрица MOSFET N/P-CH 30 В 590 мА/410 мА, 8-контактный разъем DFN1010B-6 T/R - Bulk (альтернативный вариант: PMCXB1000UEZ)
Технические параметры
| Brand: | Nexperia |
| Series | - |
| FET Type | N and P-Channel Complementary |
| Packaging | Cut Tape(CT) |
| Вес, г | 8 |
| FET Feature | Standard |
| Part Status | Active |
| Power - Max | 285mW(Ta) |
| Technology: | Si |
| Manufacturer | Nexperia USA Inc. |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Package / Case | 6-XFDFN Exposed Pad |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN-1010-6 |
| Part # Aliases: | 934070041147 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 1.05 nC, 1.2 nC |
| Vgs(th) (Max) @ Id | 950mV @ 250ВµA |
| Структура | N-Channel, P-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Factory Pack Quantity: | 5000 |
| Rds On (Max) @ Id, Vgs | 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V |
| Особенности | - |
| Pd - Power Dissipation: | 410 mW |
| Supplier Device Package | DFN1010B-6 |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.05nC @ 4.5V, 1.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 590 mA, 410 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 670 mOhms, 1.4 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 30.3pF @ 15V, 43.2pF @ 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 450 mV, 950 mV |
| Current - Continuous Drain (Id) @ 25В°C | 590mA(Ta), 410mA(Ta) |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 59 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |