PMCM6501VNEZ, Trans MOSFET N-CH 12V 9.6A 6-Pin WLCSP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8038867188
- Артикул
- PMCM6501VNEZ
- Бренд
- NXP Semiconductor
- PPAP
- No
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
- Pin Count
- 6
Цена по запросу
(от 102 ₽)
Минимальный заказ: 743 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 12V 7.3A с 6-контактным разъемом WLCSP T/R
Технические параметры
| PPAP | No |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain Triple Source |
| Package Width | 0.98 |
| Package Length | 1.48 |
| Product Category | Small Signal |
| Supplier Package | WLCSP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Standard Package Name | CSP |
| Typical Fall Time (ns) | 73.2 |
| Typical Rise Time (ns) | 33.5 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1300 |
| Typical Gate Charge @ Vgs (nC) | 16.1@4.5V |
| Maximum Gate Source Voltage (V) | 8 |
| Typical Turn-On Delay Time (ns) | 10.8 |
| Maximum Drain Source Voltage (V) | 12 |
| Typical Turn-Off Delay Time (ns) | 97.5 |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.3 |
| Typical Input Capacitance @ Vds (pF) | 920@6V |
| Maximum Drain Source Resistance (mOhm) | 18@4.5V |
| Maximum Gate Source Leakage Current (nA) | 10000 |