PJT7808_R1_00001, 20V 500mA 3 @1.2V,20mA 350mW 2 N-Channel SOT-363 Single FETs, MOSFETs RoHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8073827308
- Артикул
- PJT7808_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Series:
- NFET-20TSMN
- Fall Time:
- 23 ns
- Rise Time:
- 20 ns
Цена по запросу
(от 32,76 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Panjit |
| Series: | NFET-20TSMN |
| Fall Time: | 23 ns |
| Rise Time: | 20 ns |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Panjit |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.4 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 350 mW |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-On Delay Time: | 2.8 ns |
| Typical Turn-Off Delay Time: | 23 ns |
| Id - Continuous Drain Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 400 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |