Моя заявка (0)

PJT138K_R1_00001, 50V 360mA 1.6-@10V,500mA 236mW 1.5V@250uA 2 N-Channel SOT-363 MOSFETs ROHS

PJT138K_R1_00001, 50V 360mA 1.6-@10V,500mA 236mW 1.5V@250uA 2 N-Channel SOT-363 MOSFETs ROHS

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8048864022
Артикул
PJT138K_R1_00001
Бренд
PanJit Semiconductors
Brand:
Panjit
Series:
NFET-50TSMN
Fall Time:
23 ns
Rise Time:
19.2 ns
Цена по запросу
(от 5,30 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Массив Моп-транзисторов 50 В 360 мА (Ta) 236 МВт (Ta) для поверxностного монтажа SOT-363

Технические параметры

Brand:Panjit
Series:NFET-50TSMN
Fall Time:23 ns
Rise Time:19.2 ns
TechnologyMOSFET(Metal Oxide)
Вес, г1
Power - Max236mW(Ta)
Technology:Si
Subcategory:MOSFETs
Channel Mode:Enhancement
Configuration2 N-Channel(Dual)
Manufacturer:Panjit
Mounting TypeSurface Mount
Product Type:MOSFET
Package / Case6-TSSOP, SC-88, SOT-363
Mounting Style:SMD/SMT
Package / Case:SOT-363-6
Transistor Type:1 N-Channel
Product Category:MOSFET
Qg - Gate Charge:630 pC
Vgs(th) (Max) @ Id1.5V @ 250µA
Number of Channels:2 Channel
Transistor Polarity:N-Channel
Operating Temperature-55°C ~ 150°C(TJ)
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
Pd - Power Dissipation:236 mW
Supplier Device PackageSOT-363
Vgs - Gate-Source Voltage:-20 V, +20 V
Typical Turn-On Delay Time:2.2 ns
Gate Charge (Qg) (Max) @ Vgs1nC @ 4.5V
Typical Turn-Off Delay Time:6.2 ns
Drain to Source Voltage (Vdss)50V
Id - Continuous Drain Current:360 mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Rds On - Drain-Source Resistance:1.6 Ohms
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
Vds - Drain-Source Breakdown Voltage:50 V
Current - Continuous Drain (Id) @ 25°C360mA(Ta)
Vgs th - Gate-Source Threshold Voltage:1.5 V
Factory Pack Quantity: Factory Pack Quantity:3000

Техническая документация