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PJMP210N65EC_T0_00601, MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET

PJMP210N65EC_T0_00601, MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET

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Код товара
8062316719
Артикул
PJMP210N65EC_T0_00601
Бренд
PanJit Semiconductors
Brand:
Panjit
FET Type
N-Channel
Vgs (Max)
±30V
Fall Time:
61 ns
Цена по запросу
(от 260,64 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

N-канальный 700 В 19А (Tc) 150 Вт (Tc) Со сквозным отверстием TO-220AB-L

Технические параметры

Brand:Panjit
FET TypeN-Channel
Vgs (Max)±30V
Fall Time:61 ns
Packaging:Tube
Rise Time:65 ns
TechnologyMOSFET(Metal Oxide)
Вес, г0.01
Technology:Si
Subcategory:Transistors
Channel Mode:Enhancement
Manufacturer:Panjit
Mounting TypeThrough Hole
Product Type:MOSFETs
Package / CaseTO-220-3
Mounting Style:Through Hole
Package / Case:TO-220-3
Transistor Type:1 N-Channel
Product Category:MOSFETs
Qg - Gate Charge:34 nC
Vgs(th) (Max) @ Id4V @ 250µA
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Operating Temperature-55°C ~ 150°C(TJ)
Factory Pack Quantity:50
Rds On (Max) @ Id, Vgs210mOhm @ 9.5A, 10V
Pd - Power Dissipation:150 W
Power Dissipation (Max)150W(Tc)
Supplier Device PackageTO-220AB-L
Vgs - Gate-Source Voltage:-30 V, +30 V
Typical Turn-On Delay Time:30 ns
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Typical Turn-Off Delay Time:111 ns
Drain to Source Voltage (Vdss)700 V
Id - Continuous Drain Current:19 mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Rds On - Drain-Source Resistance:210 mOhms
Input Capacitance (Ciss) (Max) @ Vds1412 pF @ 400 V
Vds - Drain-Source Breakdown Voltage:650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C19A(Tc)
Vgs th - Gate-Source Threshold Voltage:4 V

Техническая документация