PJE8408_R1_00001, MOSFETs 20V N-Channel Enhancement Mode MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062106718
- Артикул
- PJE8408_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Series:
- NFET-20TBMN
- FET Type
- N-Channel
- Vgs (Max)
- ±10V
Цена по запросу
(от 10 ₽)
Минимальный заказ: 4000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Плоские провода SOT-523 для поверxностного монтажа, N-канальные, 20 В, 500 мА (Ta), 300 МВт (Ta)
Технические параметры
| Brand: | Panjit |
| Series: | NFET-20TBMN |
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Fall Time: | 23 ns |
| Rise Time: | 20 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Panjit |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | SC-89, SOT-490 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-523-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.4 nC |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 500mA, 4.5V |
| Pd - Power Dissipation: | 300 mW |
| Power Dissipation (Max) | 300mW(Ta) |
| Supplier Device Package | SOT-523 Flat Leads |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-On Delay Time: | 2.8 ns |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V |
| Typical Turn-Off Delay Time: | 23 ns |
| Drain to Source Voltage (Vdss) | 20 V |
| Id - Continuous Drain Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 67 pF @ 10 V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 500mA(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |