PJE8406_R1_00001, MOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062106776
- Артикул
- PJE8406_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Series:
- NFET-20TBMN
- Fall Time:
- 25 ns
- Rise Time:
- 20 ns
Цена по запросу
(от 10 ₽)
Минимальный заказ: 4000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Panjit |
| Series: | NFET-20TBMN |
| Fall Time: | 25 ns |
| Rise Time: | 20 ns |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Panjit |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-523-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 920 pC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 350 mW |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 4 ns |
| Typical Turn-Off Delay Time: | 12 ns |
| Id - Continuous Drain Current: | 800 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 700 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |