PJD50N10AL-AU_L2_000A1, 100V 25mOhm@20A,10V 2.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8065632460
- Артикул
- PJD50N10AL-AU_L2_000A1
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Fall Time:
- 14 ns
- Rise Time:
- 30 ns
- Вес, г
- 0.46
Цена по запросу
(от 96 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Panjit |
| Fall Time: | 14 ns |
| Rise Time: | 30 ns |
| Вес, г | 0.46 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Panjit |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252AA-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 83 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7.8 ns |
| Typical Turn-Off Delay Time: | 35 ns |
| Id - Continuous Drain Current: | 42 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 28.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |