PJD35P03_L2_00001, MOSFETs 30V P-Channel Enhancement Mode MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062427482
- Артикул
- PJD35P03_L2_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Fall Time:
- 34 ns
- Rise Time:
- 33 ns
- Вес, г
- 0.3
Цена по запросу
(от 80,20 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Panjit |
| Fall Time: | 34 ns |
| Rise Time: | 33 ns |
| Вес, г | 0.3 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Panjit |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252AA-3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 11 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 35 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 5.9 ns |
| Typical Turn-Off Delay Time: | 55 ns |
| Id - Continuous Drain Current: | 35 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |