PJD18N20_L2_00001, MOSFETs 200V N-Channel Enhancement Mode MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062106927
- Артикул
- PJD18N20_L2_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Fall Time:
- 99 ns
Цена по запросу
(от 130,65 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 200 В 18А (Tc) 83 Вт (Tc) для поверxностного монтажа TO-252AA
Технические параметры
| Brand: | Panjit |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Fall Time: | 99 ns |
| Rise Time: | 61 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.3 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Panjit |
| Mounting Type | Surface Mount |
| Package/Case: | TO-252AA-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package / Case | TO-252-3, DPAK(2 Leads+Tab), SC-63 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 24 nC |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 9A, 10V |
| Pd - Power Dissipation: | 83 W |
| Power Dissipation (Max) | 83W(Tc) |
| Supplier Device Package | TO-252AA |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 15 ns |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Typical Turn-Off Delay Time: | 104 ns |
| Drain to Source Voltage (Vdss) | 200 V |
| Id - Continuous Drain Current: | 18 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 1017 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |