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PJA3460_R1_00001, Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23

PJA3460_R1_00001, Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23

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Код товара
8059642785
Артикул
PJA3460_R1_00001
Бренд
PanJit Semiconductors
Case
SOT23
Brand:
Panjit
Series:
NFET-60TMN
FET Type
N-Channel
Цена по запросу
(от 15,61 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

N-канальный 60 В 2,5 А (Ta) 1,25 Вт (Ta) для поверxностного монтажа SOT-23

Технические параметры

CaseSOT23
Brand:Panjit
Series:NFET-60TMN
FET TypeN-Channel
MountingSMD
Vgs (Max)±20V
Fall Time:6.4 ns
Rise Time:9.7 ns
TechnologyMOSFET(Metal Oxide)
Вес, г0.01
Gate charge9.3nC
Technology:Si
ManufacturerPanJit Semiconductor
Polarisationunipolar
Subcategory:MOSFETs
Channel Mode:Enhancement
Drain current2.5A
Manufacturer:Panjit
Mounting TypeSurface Mount
Product Type:MOSFET
Configuration:Single
Package / CaseTO-236-3, SC-59, SOT-23-3
Kind of channelenhanced
Kind of packagereel, tape
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Transistor Type:1 N-Channel
Power dissipation1.25W
Product Category:MOSFET
Qg - Gate Charge:9.3 nC
Type of transistorN-MOSFET
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate-source voltage±20V
Number of Channels:1 Channel
On-state resistance90mΩ
Drain-source voltage60V
Pulsed drain current10A
Transistor Polarity:N-Channel
Operating Temperature-55°C ~ 150°C(TJ)
Rds On (Max) @ Id, Vgs75mOhm @ 2A, 10V
Pd - Power Dissipation:1.25 W
Power Dissipation (Max)1.25W(Ta)
Supplier Device PackageSOT-23
Vgs - Gate-Source Voltage:-20 V, +20 V
Typical Turn-On Delay Time:3.2 ns
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Typical Turn-Off Delay Time:18.5 ns
Drain to Source Voltage (Vdss)60 V
Id - Continuous Drain Current:2.5 A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Rds On - Drain-Source Resistance:90 mOhms
Input Capacitance (Ciss) (Max) @ Vds509 pF @ 15 V
Vds - Drain-Source Breakdown Voltage:60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.5A(Ta)
Vgs th - Gate-Source Threshold Voltage:2.5 V
Factory Pack Quantity: Factory Pack Quantity:3000

Техническая документация