PJA3460_R1_00001, MOSFETs 60V N-Channel Enhancement Mode MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004772555
- Артикул
- PJA3460_R1_00001
- Бренд
- PanJit Semiconductors
- Case
- SOT23
- Brand:
- Panjit
- Series:
- NFET-60TMN
- FET Type
- N-Channel
Цена по запросу
(от 38,18 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 60 В 2,5 А (Ta) 1,25 Вт (Ta) для поверxностного монтажа SOT-23
Технические параметры
| Case | SOT23 |
| Brand: | Panjit |
| Series: | NFET-60TMN |
| FET Type | N-Channel |
| Mounting | SMD |
| Vgs (Max) | ±20V |
| Fall Time: | 6.4 ns |
| Rise Time: | 9.7 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 41 |
| Gate charge | 9.3nC |
| Technology: | Si |
| Manufacturer | PanJit Semiconductor |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 2.5A |
| Manufacturer: | Panjit |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 1.25W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 9.3 nC |
| Type of transistor | N-MOSFET |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 90mΩ |
| Drain-source voltage | 60V |
| Pulsed drain current | 10A |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2A, 10V |
| Особенности | Enhancement Mode |
| Pd - Power Dissipation: | 1.25 W |
| Power Dissipation (Max) | 1.25W(Ta) |
| Supplier Device Package | SOT-23 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 3.2 ns |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Typical Turn-Off Delay Time: | 18.5 ns |
| Drain to Source Voltage (Vdss) | 60 V |
| Id - Continuous Drain Current: | 2.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 90 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 15 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.25 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |