PJA3435_R1_00001, MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062106735
- Артикул
- PJA3435_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Fall Time:
- 116 ns
- Rise Time:
- 21 ns
- Вес, г
- 0.01
Цена по запросу
(от 13 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Panjit |
| Fall Time: | 116 ns |
| Rise Time: | 21 ns |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Panjit |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 1.4 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 500 mW |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-On Delay Time: | 7.2 ns |
| Typical Turn-Off Delay Time: | 85 ns |
| Id - Continuous Drain Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 6 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |