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PHPT610035NKX, Bipolar Transistor Array, Dual NPN, 100 V, 3 A, 1.25 W

PHPT610035NKX, Bipolar Transistor Array, Dual NPN, 100 V, 3 A, 1.25 W

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Код товара
8996722396
Артикул
PHPT610035NKX
Бренд
Nexperia B.V.
ECCN
EAR99
HTSUS
8541.29.0095
Brand:
Nexperia
Package
Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 207 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярная (BJT) транзисторная матрица 2 NPN (сдвоенная) 100 В 3 А 140 МГц 1,25 Вт для поверxностного монтажа LFPAK56D

Технические параметры

ECCNEAR99
HTSUS8541.29.0095
Brand:Nexperia
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
MilitaryNo
PackagingTape and Reel
Pin Count8
AutomotiveYes
Вес, г0.03
Power - Max1.25W
RoHS StatusROHS3 Compliant
Technology:Si
REACH StatusREACH Unaffected
Subcategory:Transistors
ConfigurationDual
Manufacturer:Nexperia
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
Configuration:Dual
Package / CaseSOT-1205, 8-LFPAK56
Qualification:AEC-Q101
Mounting Style:SMD/SMT
Package / Case:LFPAK56D-8
Part # Aliases:934068169115
Transistor Type2 NPN (Dual)
Supplier PackageLFPAK-D
Product Category:Bipolar Transistors-BJT
Структураnpn
Base Product NumberPHPT610035 ->
AEC Qualified NumberAEC-Q101
Transistor Polarity:NPN
Operating Temperature175В°C (TJ)
Frequency - Transition140MHz
Minimum DC Current Gain80@1A@2VI150@500mA@10VI80@1A@10VI20@2A@10VI10@3A@10V
Pd - Power Dissipation:25 W
Supplier Device PackageLFPAK56D
Gain Bandwidth Product fT:140 MHz
Emitter- Base Voltage VEBO:7 V
Number of Elements per Chip2
Collector- Base Voltage VCBO:100 V
Maximum DC Collector Current:3 A
Operating Temperature - (??C)-55~175
Vce Saturation (Max) @ Ib, Ic330mV @ 300mA, 3A
Current - Collector (Ic) (Max)3A
Maximum Operating Temperature:+175 C
Minimum Operating Temperature:-55 C
Current - Collector Cutoff (Max)100nA
Maximum Power Dissipation - (mW)25000
Moisture Sensitivity Level (MSL)1 (Unlimited)
Maximum DC Collector Current - (A)3
Maximum Emitter Base Voltage - (V)7
Collector- Emitter Voltage VCEO Max:100 V
Maximum Collector Base Voltage - (V)100
Maximum Transition Frequency - (MHz)140(Typ)
Collector-Emitter Saturation Voltage:225 mV
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 10V
Maximum Collector-Emitter Voltage - (V)100
Voltage - Collector Emitter Breakdown (Max)100V
Factory Pack Quantity: Factory Pack Quantity:1500
Максимально допустимый ток к ( Iк макс.А)3

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