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PHE13003C.126 WeEn

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Код товара
8073754653
Артикул
PHE13003C.126
Бренд
WeEn Semiconductors
ECCN
EAR99
HTSUS
8541.29.0095
Brand:
WeEn Semiconductors
Package
Cut Tape (CT)Tape & Box (TB)
Цена по запросу
(от 71 ₽)
Минимальный заказ: 27 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 400V 1.5A 2.1 Вт со сквозным отверстием TO-92-3

Технические параметры

ECCNEAR99
HTSUS8541.29.0095
Brand:WeEn Semiconductors
PackageCut Tape (CT)Tape & Box (TB)
Вес, г1.93
Power - Max2.1W
RoHS StatusRoHS Compliant
Technology:Si
Subcategory:Transistors
Manufacturer:WeEn Semiconductors
Mounting TypeThrough Hole
Package/Case:TO-92-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Style:Through Hole
Part # Aliases:934063922126
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Transistor Polarity:NPN
Operating Temperature150В°C (TJ)
Factory Pack Quantity:10000
Pd - Power Dissipation:2.1 W
Supplier Device PackageTO-92-3
DC Current Gain hFE Max:25
Emitter- Base Voltage VEBO:9 V
Collector- Base Voltage VCBO:700 V
Maximum DC Collector Current:1.5 A
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 1.5A
Current - Collector (Ic) (Max)1.5A
Maximum Operating Temperature:+150 C
DC Collector/Base Gain hFE Min:5
Current - Collector Cutoff (Max)100ВµA
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:400 V
Collector-Emitter Saturation Voltage:1.5 V
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 1A, 2V
Voltage - Collector Emitter Breakdown (Max)400V

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