PEMD9,115, Транзистор NPN / PNP, биполярный, BRT,комплементарная пара, 50В
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- Код товара
- 8070074674
- Артикул
- PEMD9,115
- Бренд
- Nexperia B.V.
- Case
- SOT666
- PPAP
- No
- Type
- NPN|PNP
- Brand:
- Nexperia
Цена по запросу
(от 29,92 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans Digital BJT NPN/PNP 50 В 100 мА 300 МВт 6-контактный SOT-666 T/R
Технические параметры
| Case | SOT666 |
| PPAP | No |
| Type | NPN|PNP |
| Brand: | Nexperia |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Frequency | 180…230MHz |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Вес, г | 0.02 |
| PCB changed | 6 |
| Part Status | Active |
| Manufacturer | NEXPERIA |
| Polarisation | bipolar |
| Subcategory: | Transistors |
| Base resistor | 10kΩ |
| Configuration | Dual |
| Manufacturer: | Nexperia |
| Product Type: | BJTs-Bipolar Transistors-Pre-Biased |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-666-6 |
| Part # Aliases: | 934056706115 |
| Supplier Package | SOT-666 |
| Collector current | 0.1A |
| Power dissipation | 0.3W |
| Product Category: | Bipolar Transistors-Pre-Biased |
| Kind of transistor | BRT, complementary pair |
| Type of transistor | NPN/PNP |
| Структура | pnp |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | NPN, PNP |
| Base-emitter resistor | 47kΩ |
| Typical Resistor Ratio | 0.21 |
| Minimum DC Current Gain | 100@5mA@5V |
| Pd - Power Dissipation: | 200 mW |
| Typical Input Resistor: | 10 kOhms |
| Typical Resistor Ratio: | 0.21 |
| Collector-emitter voltage | 50V |
| Peak DC Collector Current: | 100 mA |
| Emitter- Base Voltage VEBO: | 10 V |
| Continuous Collector Current: | 100 mA |
| Typical Input Resistor (kOhm) | 10 |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 300 |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Typical Current Gain Bandwidth (MHz) | 230@NPN|180@PNP |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (mA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.1@0.25mA@5mA |