PD57018-E, Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
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- Код товара
- 8001282052
- Артикул
- PD57018-E
- Бренд
- STMicroelectronics
- Gain:
- 16.5 dB
- Type:
- RF Power MOSFET
- Brand:
- STMicroelectronics
- Series:
- PD57018-E
Цена по запросу
(от 4 790 ₽)
Минимальный заказ: 6 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Gain: | 16.5 dB |
| Type: | RF Power MOSFET |
| Brand: | STMicroelectronics |
| Series: | PD57018-E |
| Packaging: | Tube |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Output Power: | 18 W |
| Package/Case: | PowerSO-10RF-Formed-4 |
| Product Type: | RF MOSFET Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | LDMOS FET |
| Product Category: | RF MOSFET Transistors |
| Moisture Sensitive: | Yes |
| Operating Frequency: | 1 GHz |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 31.7 W |
| Vgs - Gate-Source Voltage: | 20 V |
| Id - Continuous Drain Current: | 2.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Forward Transconductance - Min: | 1 S |
| Rds On - Drain-Source Resistance: | 760 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 65 V |
| Factory Pack Quantity: Factory Pack Quantity: | 400 |