PBSS5250T,215, Транзистор: PNP

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8042956445
- Артикул
- PBSS5250T,215
- Бренд
- Nexperia B.V.
- Brand:
- Nexperia
- Вес, г
- 0.1
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 44 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
50 В 480 МВт 200 Вт при 1 А, 2 В 2 А биполярныx транзистораx PNP SOT-23 - BJT ROHS
Технические параметры
| Brand: | Nexperia |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Nexperia |
| Package/Case: | SOT-23-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934057992215 |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Operating Temperature | - |
| Collector Current (Ic) | 2A |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 480mW |
| Pd - Power Dissipation: | 480 mW |
| DC Current Gain hFE Max: | 200 at 500 mA, 2 V |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 200@1A, 2V |
| Collector- Base Voltage VCBO: | 50 V |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 200 at 500 mA, 2 V, 200 at 1 A, 2 V, 130 at 2 A, 2 V |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@2A, 100mA |