PBSS5130T,215, Транзистор: PNP
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- Код товара
- 8024652725
- Артикул
- PBSS5130T,215
- Бренд
- Nexperia B.V.
- Brand:
- Nexperia
- Вес, г
- 0.02
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 10,94 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В 480 МВт, 260 В при 500 мА, 2 В 1 А, биполярные транзисторы PNP SOT-23 - BJT ROHS
Технические параметры
| Brand: | Nexperia |
| Вес, г | 0.02 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Nexperia |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | 934057988215 |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Operating Temperature | - |
| Collector Current (Ic) | 1A |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 480mW |
| Pd - Power Dissipation: | 300 mW |
| DC Current Gain hFE Max: | 300 at 100 mA, 2 V |
| Transition Frequency (fT) | 200MHz |
| Gain Bandwidth Product fT: | 200 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 260@500mA, 2V |
| Collector- Base Voltage VCBO: | 30 V |
| Continuous Collector Current: | -1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 300 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 225 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 225mV@1A, 50mA |