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PBSS302ND,115, Bipolar Transistors - BJT PBSS302ND/SOT457/SC-74

PBSS302ND,115, Bipolar Transistors - BJT PBSS302ND/SOT457/SC-74

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Код товара
8006216733
Артикул
PBSS302ND,115
Бренд
Nexperia B.V.
Grade
Automotive
Brand:
Nexperia
Вес, г
0.01
Power - Max
1.1 W
Цена по запросу
(от 190 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 40 В 4 А 150 МГц 1,1 Вт для поверxностного монтажа 6-TSOP

Технические параметры

GradeAutomotive
Brand:Nexperia
Вес, г0.01
Power - Max1.1 W
Technology:Si
Subcategory:Transistors
Manufacturer:Nexperia
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
QualificationAEC-Q100
Configuration:Single
Package / CaseSC-74, SOT-457
Mounting Style:SMD/SMT
Package / Case:TSOP-6
Part # Aliases:934059129115
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Transistor Polarity:NPN
Operating Temperature150°C(TJ)
Factory Pack Quantity:3000
Frequency - Transition150MHz
Pd - Power Dissipation:2.5 W
Supplier Device Package6-TSOP
DC Current Gain hFE Max:300 at 500 mA, 2 V
Gain Bandwidth Product fT:150 MHz
Emitter- Base Voltage VEBO:5 V
Collector- Base Voltage VCBO:60 V
Continuous Collector Current:4 A
Maximum DC Collector Current:4 A
Vce Saturation (Max) @ Ib, Ic450mV @ 600mA, 6A
Current - Collector (Ic) (Max)4 A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:50
Current - Collector Cutoff (Max)100nA
Collector- Emitter Voltage VCEO Max:40 V
Collector-Emitter Saturation Voltage:330 mV
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 2A, 2V
Voltage - Collector Emitter Breakdown (Max)40 V

Техническая документация