NX7002AK,215
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8287974341
- Бренд
- Nexperia B.V.
- ECCN
- EAR99
- RoHS
- Details
- Brand
- Nexperia
- HTSUS
- 8541.29.0095
Цена по запросу
(от 1,92 ₽)
Минимальный заказ: 132 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 60В
Технические параметры
| ECCN | EAR99 |
| RoHS | Details |
| Brand | Nexperia |
| HTSUS | 8541.29.0095 |
| Width | 1.4mm |
| Series | NX7002AK |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | N-Channel |
| Fall Time | 14 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 7 ns |
| Vgs (Max) | В±20V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 0.05 |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Nexperia |
| Package Type | SOT-23 |
| REACH Status | REACH Unaffected |
| Корпус | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 0.33 nC |
| Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 2.1V @ 250ВµA |
| Base Product Number | NX7002 -> |
| Transistor Polarity | N Channel |
| Factory Pack Quantity | 3000 |
| Forward Diode Voltage | 1.2V |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Pd - Power Dissipation | 1.33 W |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 100mA, 10V |
| Особенности | - |
| Power Dissipation (Max) | 265mW (Ta), 1.33W (Tc) |
| Supplier Device Package | TO-236AB |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.33 W |
| Typical Gate Charge @ Vgs | 0.33 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 2.1V @ 250uA |
| Typical Turn-On Delay Time | 6 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 20 ns |
| Gate Charge (Qg) (Max) @ Vgs | 0.43nC @ 4.5V |
| Maximum Drain Source Voltage | 60 V |
| Id - Continuous Drain Current | 190 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Drain to Source Voltage (Vdss) | 60V |
| Forward Transconductance - Min | 230 mS |
| Maximum Gate Threshold Voltage | 2.1V |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Drain Source Resistance | 4.5 Ω |
| Maximum Continuous Drain Current | 300 mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 4.5О© @ 100mA,10V |
| Power Dissipation-Max (Ta=25В°C) | 265mW |
| Input Capacitance (Ciss) (Max) @ Vds | 17pF @ 10V |
| Vds - Drain-Source Breakdown Voltage | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Continuous Drain Current (Id) @ 25В°C | 190mA |
| Current - Continuous Drain (Id) @ 25В°C | 190mA (Ta) |
| Крутизна характеристики, S | 500 mS |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.19 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |