NX3020NAKS,115, Сборка из полевых транзисторов, 2N-канальный, 30 В, 0.18 А, 0.28Вт
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- Код товара
- 8046373879
- Артикул
- NX3020NAKS,115
- Бренд
- Nexperia B.V.
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Width
- 1.35mm
- Series
- NX3020NAKS
Цена по запросу
(от 17,46 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Матрица Mosfet 2 N-канальныx (сдвоенныx) транзистора 30 В 180 мА 375 МВт для поверxностного монтажа 6-TSSOP
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Width | 1.35mm |
| Series | NX3020NAKS |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | 2 N-Channel (Dual) |
| Pin Count | 6 |
| Вес, г | 0.02 |
| FET Feature | Logic Level Gate |
| Power - Max | 375mW |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TSSOP |
| REACH Status | REACH Unaffected |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Vgs(th) (Max) @ Id | 1.5V @ 250ВµA |
| Base Product Number | NX3020 -> |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 100mA, 10V |
| Supplier Device Package | 6-TSSOP |
| Maximum Power Dissipation | 1.1 W |
| Typical Gate Charge @ Vgs | 0.34 nC @ 4.5 V |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 2 |
| Gate Charge (Qg) (Max) @ Vgs | 0.44nC @ 4.5V |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 30V |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Drain Source Resistance | 13 Ω |
| Maximum Continuous Drain Current | 180 mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 10V |
| Current - Continuous Drain (Id) @ 25В°C | 180mA |