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NX3008NBKW,115

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Код товара
8008598242
Бренд
Nexperia B.V.
ECCN
EAR99
RoHS
Details
Brand
Nexperia
HTSUS
8541.21.0095
Цена по запросу
(от 5,24 ₽)
Минимальный заказ: 66 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзистор полевой MOSFET N-канальный 30В

Технические параметры

ECCNEAR99
RoHSDetails
BrandNexperia
HTSUS8541.21.0095
Width1.35mm
SeriesAutomotive, AEC-Q101, TrenchMOSв„ў ->
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
ProductTrench MOSFET
FET TypeN-Channel
Fall Time19 ns
PackagingReel
Pin Count3
Rise Time11 ns
Vgs (Max)В±8V
TechnologyMOSFET (Metal Oxide)
Вес, г0.03
RoHS StatusROHS3 Compliant
Channel ModeEnhancement
Channel TypeN
ManufacturerNexperia
Package TypeSOT-323
REACH StatusREACH Unaffected
Корпусsot-323
ConfigurationSingle
Mounting TypeSurface Mount
Mounting StyleSMD/SMT
Package / CaseSC-70, SOT-323
Transistor Type1 N-Channel
Product CategoryMOSFET
Qg - Gate Charge0.52 nC
Number of Channels1 Channel
Vgs(th) (Max) @ Id1.1V @ 250ВµA
Automotive StandardAEC-Q101
Base Product NumberNX3008 ->
Transistor PolarityN-Channel
Factory Pack Quantity3000
Forward Diode Voltage1.2V
Operating Temperature-55В°C ~ 150В°C (TJ)
Pd - Power Dissipation310 mW
Rds On (Max) @ Id, Vgs1.4Ohm @ 350mA, 4.5V
Особенности-
Power Dissipation (Max)260mW (Ta), 830mW (Tc)
Supplier Device PackageSOT-323
Transistor ConfigurationSingle
Maximum Power Dissipation830 mW
Typical Gate Charge @ Vgs0.52 nC @ 4.5 V
Vgs - Gate-Source Voltage8 V
Typical Turn-On Delay Time15 ns
Maximum Gate Source Voltage-8 V, +8 V
Number of Elements per Chip1
Typical Turn-Off Delay Time69 ns
Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
Maximum Drain Source Voltage30 V
Id - Continuous Drain Current350 mA
Maximum Operating Temperature+150 C
Minimum Operating Temperature-55 C
Drain to Source Voltage (Vdss)30V
Forward Transconductance - Min310 mS
Maximum Gate Threshold Voltage1.1V
Minimum Gate Threshold Voltage0.6V
Maximum Drain Source Resistance1.4 Ω
кол-во в упаковке3000
Maximum Continuous Drain Current350 mA
Moisture Sensitivity Level (MSL)1 (Unlimited)
Rds On - Drain-Source Resistance1.4 Ohms
Input Capacitance (Ciss) (Max) @ Vds50pF @ 15V
Vds - Drain-Source Breakdown Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs th - Gate-Source Threshold Voltage0.9 V
Current - Continuous Drain (Id) @ 25В°C350mA (Ta)
Максимальное напряжение затвор-исток Uзи макс.,В±20В

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