NX3008NBKS,115, Транзистор N-МОП, полевой, 30В, 350мА, 280мВт, SOT363
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- Код товара
- 8024650127
- Артикул
- NX3008NBKS,115
- Бренд
- Nexperia B.V.
- ECCN
- EAR99
- Brand
- Nexperia
- HTSUS
- 8541.21.0095
- Width
- 1.35mm
Цена по запросу
(от 18,62 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Mosfet-матрица 2-канальная (двойная) 30 В 350 мА 445 МВт для поверxностного монтажа 6-TSSOP
Технические параметры
| ECCN | EAR99 |
| Brand | Nexperia |
| HTSUS | 8541.21.0095 |
| Width | 1.35mm |
| Series | Automotive, AEC-Q101, TrenchMOSв„ў -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | 2 N-Channel (Dual) |
| Fall Time | 19 ns |
| Packaging | Cut Tape or Reel |
| Pin Count | 6 |
| Rise Time | 11 ns |
| Technology | Si |
| Вес, г | 0.01 |
| FET Feature | Logic Level Gate |
| Power - Max | 445mW |
| RoHS Status | ROHS3 Compliant |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Nexperia |
| Package Type | SOT-363 |
| Product Type | MOSFET |
| REACH Status | REACH Unaffected |
| Configuration | Dual |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Mounting Style | SMD/SMT |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Transistor Type | 2 N-Channel Trench MOSFET |
| Product Category | MOSFET |
| Qg - Gate Charge | 0.52 nC |
| Number Of Channels | 2 Channel |
| Vgs(th) (Max) @ Id | 1.1V @ 250ВµA |
| Структура | N-МОП |
| Base Product Number | NX3008 -> |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Pd - Power Dissipation | 445 mW |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 350mA, 4.5V |
| Особенности | - |
| Supplier Device Package | 6-TSSOP |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 445 mW |
| Typical Gate Charge @ Vgs | 0.52 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 4.5 V |
| Typical Turn-On Delay Time | 15 ns |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Typical Turn-Off Delay Time | 69 ns |
| Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
| Maximum Drain Source Voltage | 30 V |
| Id - Continuous Drain Current | 350 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Drain to Source Voltage (Vdss) | 30V |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Drain Source Resistance | 2.8 Ω |
| Maximum Continuous Drain Current | 350 mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 1.4 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 15V |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs Th - Gate-Source Threshold Voltage | 600 mV |
| Current - Continuous Drain (Id) @ 25В°C | 350mA |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.35 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.28 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |