NX3008NBK,215
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062734833
- Бренд
- Nexperia B.V.
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Width
- 1.4mm
- Series
- Automotive, AEC-Q101, TrenchMOSв„ў ->
Цена по запросу
(от 5 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 30 В 400 мА (Tc), 350 МВт (Ta), 1,14 Вт (Tc) для поверxностного монтажа TO-236AB
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Width | 1.4mm |
| Series | Automotive, AEC-Q101, TrenchMOSв„ў -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | N-Channel |
| Pin Count | 3 |
| Vgs (Max) | В±8V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| REACH Status | REACH Unaffected |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ Id | 1.1V @ 250ВµA |
| Base Product Number | NX3008 -> |
| Transistor Material | Si |
| Transistor Polarity | N Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 350mA, 4.5V |
| Power Dissipation (Max) | 350mW (Ta), 1.14W (Tc) |
| Supplier Device Package | TO-236AB |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.14 W |
| Typical Gate Charge @ Vgs | 0.52 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 1.1V @ 250uA |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 30V |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Drain Source Resistance | 2.8 Ω |
| Maximum Continuous Drain Current | 400 mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 1.4О© @ 350mA,4.5V |
| Power Dissipation-Max (Ta=25В°C) | 1.14W(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 15V |
| Vds - Drain-Source Breakdown Voltage | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Continuous Drain Current (Id) @ 25В°C | 400mA(Tc) |
| Current - Continuous Drain (Id) @ 25В°C | 400mA (Tc) |