NVTR4503NT1G, MOSFETs NFET SOT23 30V 2A 0.110R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005375958
- Артикул
- NVTR4503NT1G
- Бренд
- ON Semiconductor***
- PPAP
- Yes
- Width
- 1.4mm
- Вид
- MOSFET
- Тип
- полевой
Цена по запросу
(от 29,49 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 30В, 1,5А, 0,73Вт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | Yes |
| Width | 1.4mm |
| Вид | MOSFET |
| Тип | полевой |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Корпус | sot23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Структура | MOSFET |
| Transistor Material | Si |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 1.6|1.8 |
| Typical Rise Time (ns) | 5.8|6.7 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 730 mW |
| Typical Gate Charge @ Vgs | 3.6 nC @ 10 V |
| Supplier Temperature Grade | Automotive |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation (mW) | 730 |
| Typical Gate Charge @ 10V (nC) | 3.6 |
| Typical Gate Charge @ Vgs (nC) | 3.6 10V|1.9 4.5V |
| Maximum Drain Source Resistance | 140 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 52 |
| Typical Turn-On Delay Time (ns) | 5.8|4.8 |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.8 |
| Typical Turn-Off Delay Time (ns) | 14|13.6 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.85 |
| Typical Gate to Drain Charge (nC) | 0.9 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.75 |
| Typical Gate to Source Charge (nC) | 0.6 |
| Typical Reverse Recovery Time (ns) | 9.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 135 15V|130 24V |
| Typical Reverse Recovery Charge (nC) | 4 |
| Maximum Drain Source Resistance (mOhm) | 110 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 10 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.73 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 15 15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 300 |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |