NVTR4502PT1G, Транзистор: P-MOSFET; полевой; -30В; -1,56А; 1,25Вт; SOT23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072536507
- Артикул
- NVTR4502PT1G
- Бренд
- ON Semiconductor***
- HTS
- 8541.21.00.95
- PPAP
- Yes
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 50,32 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.21.00.95 |
| PPAP | Yes |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 0.03 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 1.3 |
| Package Height | 0.94 |
| Package Length | 2.9 |
| EDA / CAD Models | NVTR4502PT1G by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 400mW |
| Typical Fall Time (ns) | 17.5 |
| Typical Rise Time (ns) | 12 |
| Total Gate Charge (Qg@Vgs) | 10nC@10V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 200pF@15V |
| Continuous Drain Current (Id) | 1.13A |
| Maximum Power Dissipation (mW) | 400 |
| Typical Gate Charge @ 10V (nC) | 6 |
| Typical Gate Charge @ Vgs (nC) | 6@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5.2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.13 |
| Typical Input Capacitance @ Vds (pF) | 200@15V |
| Maximum Drain Source Resistance (mOhm) | 200@10V |