NVTFS5826NLTAG, Trans MOSFET N-CH 60V 7.6A 8-Pin WDFN EP T/R Automotive AEC-Q101
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001329463
- Артикул
- NVTFS5826NLTAG
- Бренд
- ON Semiconductor***
- PPAP
- Yes
- SVHC
- Yes
- Series
- -
- FET Type
- N-Channel
Цена по запросу
(от 107 ₽)
Минимальный заказ: 706 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 7.6A с 8-контактным разъемом WDFN EP T/R Автомобильный AEC-Q101
Технические параметры
| PPAP | Yes |
| SVHC | Yes |
| Series | - |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Vgs (Max) | В±20V |
| Automotive | Yes |
| Lead Shape | No Lead |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| FET Feature | - |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Package Width | 3.05 mm |
| Package / Case | 8-PowerWDFN |
| Package Length | 3.05 mm |
| Product Category | Power MOSFET |
| Supplier Package | WDFN EP |
| Maximum IDSS (uA) | 1 |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Структура | N-Channel |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Standard Package Name | DFN |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 10A, 10V |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 21 |
| Typical Rise Time (ns) | 29 |
| Особенности | автомобильные приложения |
| Power Dissipation (Max) | 3.2W(Ta), 22W(Tc) |
| Supplier Device Package | 8-WDFN(3.3x3.3) |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Maximum Power Dissipation (mW) | 3200 |
| Typical Gate Charge @ 10V (nC) | 16 |
| Typical Gate Charge @ Vgs (nC) | 8.3@4.5V|16@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 25V |
| Maximum Continuous Drain Current (A) | 7.6 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 850@25V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Maximum Drain-Source Resistance (mOhm) | 24@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Current - Continuous Drain (Id) @ 25В°C | 7.6A(Ta) |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 7.6 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |