P-Channel MOSFET, 1.7 A, 60 V, 8-Pin WDFN NVTFS5124PLTAG
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8038515808
- Артикул
- NVTFS5124PLTAG
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Series:
- NVTFS5124PL
- Pin Count
- 8
- Fall Time:
- 10 ns
Цена по запросу
(от 118 ₽)
Минимальный заказ: 25 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Series: | NVTFS5124PL |
| Pin Count | 8 |
| Fall Time: | 10 ns |
| Rise Time: | 14 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | WDFN |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | WDFN-8 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 6 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 18 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 18 W |
| Typical Gate Charge @ Vgs | 6 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 13 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 2.4 A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 4 S |
| Maximum Drain Source Resistance | 380 mΩ |
| Maximum Continuous Drain Current | 1.7 A |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.7 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |