NVTFS4C05NTAG,Power MOSFET, N Channel, 30 V, 102 A, 0.0029 ohm, WDFN, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8614321195
- Артикул
- NVTFS4C05NTAG
- Бренд
- ON Semiconductor***
- HTS
- COMPONENTS
- PPAP
- Yes
- SVHC
- Yes
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 370 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | COMPONENTS |
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Вес, г | 0.1 |
| PCB changed | 8 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.05 |
| Package Height | 0.75(Max) |
| Package Length | 3.05 |
| EDA / CAD Models | NVTFS4C05NTAG by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | WDFN EP |
| Maximum IDSS (uA) | 1 |
| Структура | N-Channel |
| Standard Package Name | DFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 5|8 |
| Typical Rise Time (ns) | 25|30 |
| Особенности | - |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3200 |
| Typical Gate Charge @ 10V (nC) | 31 |
| Typical Gate Charge @ Vgs (nC) | 14.5@4.5V|31@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11|8 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 20|26 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 22 |
| Typical Input Capacitance @ Vds (pF) | 1988@15V |
| Maximum Drain Source Resistance (mOhm) | 3.6@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 102 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0029 Ом |