NVTFS015N04CTAG, 40V 27A 14.4mOhm@10V,7.5A 23W 3.5V@20uA 10pF@25V N Channel 325pF@25V 6.3nC@10V -55°C~+175°C@(Tj) WDFN-5(3.3x3.3) MOSFETs R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061594364
- Артикул
- NVTFS015N04CTAG
- Бренд
- ON Semiconductor***
- Width
- 3.15mm
- Brand:
- onsemi
- Pin Count
- 8
- Fall Time:
- 4.5 ns
Цена по запросу
(от 74,80 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Автомобильный силовой МОП-транзистор в корпусе с плоским выводом размером 3x3 мм, разработанный для компактной и эффективной конструкции и обладающий высокими тепловыми xарактеристиками.
Технические параметры
| Width | 3.15mm |
| Brand: | onsemi |
| Pin Count | 8 |
| Fall Time: | 4.5 ns |
| Rise Time: | 13 ns |
| Вес, г | 0.1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | WDFN |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | WDFN-8 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 6.3 nC |
| Automotive Standard | AEC-Q101 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Factory Pack Quantity: | 1500 |
| Pd - Power Dissipation: | 23 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 23 W |
| Typical Gate Charge @ Vgs | 6.3 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 14 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 27 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2 S |
| Maximum Drain Source Resistance | 17.3 mΩ |
| Maximum Continuous Drain Current | 27 A |
| Rds On - Drain-Source Resistance: | 17.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |