NVR4501NT1G, Trans MOSFET N-CH 20V 3.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001061663
- Артикул
- NVR4501NT1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Series:
- NTR4501
- Fall Time:
- 3 ns
- Rise Time:
- 12 ns
Цена по запросу
(от 33 ₽)
Минимальный заказ: 2109 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Series: | NTR4501 |
| Fall Time: | 3 ns |
| Rise Time: | 12 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 2.4 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 1.25 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 6.5 ns |
| Typical Turn-Off Delay Time: | 12 ns |
| Id - Continuous Drain Current: | 3.2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 9 S |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 650 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |