Моя заявка (0)
NVMYS025N06CLTWG, MOSFETs 60V 30Ohm 20A Single N-Channel

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Код товара
8062413560
Артикул
NVMYS025N06CLTWG
Бренд
ON Semiconductor***
Type
Power MOSFET
Brand:
onsemi
Mounting
Surface Mount
Polarity
N
Цена по запросу
(от 132,49 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзистор MOSFET N-CH 60V 21A с 5-контактным разъемом на магнитной ленте и катушке (Артикул: NVMYS025N06CLTWG)

Технические параметры

TypePower MOSFET
Brand:onsemi
MountingSurface Mount
PolarityN
PackagingTape and Reel
Pin Count4+Tab
Fall Time:2.5 ns
Packaging:Reel, Cut Tape
Rise Time:12.5 ns
Вес, г0.08
Technology:Si
Channel ModeEnhancement
Package TypeLFPAK
Rad HardenedNo
Subcategory:MOSFETs
Channel Mode:Enhancement
Manufacturer:onsemi
Product Type:MOSFET
Configuration:Single
Qualification:AEC-Q101
Mounting Style:SMD/SMT
Package / Case:LFPAK-4
Transistor Type:1 N-Channel
Power Dissipation3.8(W)
Product Category:MOSFET
Qg - Gate Charge:5.8 nC
Number of Elements1
Number of Channels:1 Channel
Drain-Source On-Volt60(V)
Operating Temp Range-55C to 175C
Transistor Polarity:N-Channel
Factory Pack Quantity:3000
Pd - Power Dissipation:3.8 W
Continuous Drain Current8.5(A)
Gate-Source Voltage (Max)'±20(V)
Vgs - Gate-Source Voltage:-20 V, +20 V
Typical Turn-On Delay Time:5 ns
Typical Turn-Off Delay Time:14 ns
Id - Continuous Drain Current:21 A
Maximum Operating Temperature:+175 C
Minimum Operating Temperature:-55 C
Forward Transconductance - Min:20 S
Rds On - Drain-Source Resistance:27.5 mOhms
Operating Temperature ClassificationMilitary
Vds - Drain-Source Breakdown Voltage:60 V
Vgs th - Gate-Source Threshold Voltage:2 V

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