NVMYS012N10MCLTWG, MOSFETs PTNG 100V LL LFPAK4
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025350192
- Артикул
- NVMYS012N10MCLTWG
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 4.6 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 2.7 ns
Цена по запросу
(от 175,25 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 4.6 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 2.7 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | LFPAK-4 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 19 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Особенности | - |
| Pd - Power Dissipation: | 72 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 8.4 ns |
| Typical Turn-Off Delay Time: | 23.8 ns |
| Id - Continuous Drain Current: | 52 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 51 S |
| Rds On - Drain-Source Resistance: | 18.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |