NVMFS5C680NLT1G,Power MOSFET, N Channel, 60 V, 21 A, 0.0229 ohm, DFN, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8000446479
- Артикул
- NVMFS5C680NLT1G
- Бренд
- ON Semiconductor***
- PPAP
- Yes
- SVHC
- Yes
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 204 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 60В 21А 27.5мОм
Технические параметры
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | Yes |
| Lead Shape | Flat |
| Вес, г | 0.1 |
| PCB changed | 5 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.9 |
| Package Length | 4.9 |
| EDA / CAD Models | NVMFS5C680NLT1G by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | SO-FL EP |
| Структура | N-Channel |
| Standard Package Name | DFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 2.5 |
| Typical Rise Time (ns) | 12.5 |
| Особенности | - |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3400 |
| Typical Gate Charge @ 10V (nC) | 5.8 |
| Typical Gate Charge @ Vgs (nC) | 5.8@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8.1 |
| Typical Input Capacitance @ Vds (pF) | 330@25V |
| Maximum Drain Source Resistance (mOhm) | 27.5@10V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 21 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0229 Ом |