NVMFS5C670NLT1G, MOSFETs NFET SO8FL 60V 71A 6.1MOH
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063705642
- Артикул
- NVMFS5C670NLT1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 4 ns
- Rise Time:
- 60 ns
- Вес, г
- 0.19
Цена по запросу
(от 170 ₽)
Минимальный заказ: 1500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 4 ns |
| Rise Time: | 60 ns |
| Вес, г | 0.19 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | SO-8FL-4 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 9 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1500 |
| Pd - Power Dissipation: | 61 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Id - Continuous Drain Current: | 71 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 82 S |
| Rds On - Drain-Source Resistance: | 8.8 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |