NVMFS5C460NLAFT1G, 40V 78A 3.7mOhm@10V,35A 50W N Channel DFN-5(5.9x4.9) MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064282267
- Артикул
- NVMFS5C460NLAFT1G
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- PPAP
- Yes
- SVHC
- Yes
- Brand:
- onsemi
Цена по запросу
(от 120 ₽)
Минимальный заказ: 1500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы PowerTrench® onsemi / Fairchild предлагают широкий ассортимент МОП-транзисторов в отрасли. Эти МОП-транзисторы имеют как N-канальную, так и P-канальную версии, оптимизированные для работы с низким уровнем коммутации RDS (ON). Типичные области применения включают переключатели нагрузки, первичную коммутацию, мобильные компьютеры, преобразователи постоянного тока в постоянный и синxронные выпрямители.
Технические параметры
| HTS | 8541.29.00.95 |
| PPAP | Yes |
| SVHC | Yes |
| Brand: | onsemi |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | Yes |
| Fall Time: | 4.4 ns |
| Lead Shape | Flat |
| Rise Time: | 3.4 ns |
| Вес, г | 0.16 |
| PCB changed | 5 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | onsemi |
| Package Width | 5.9 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package Height | 1.05(Max) |
| Package Length | 4.9 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SO-8FL-4 |
| Product Category | Power MOSFET |
| Supplier Package | SO-FL EP |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 10 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 23 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | DFN |
| Factory Pack Quantity: | 1500 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 4.4 |
| Typical Rise Time (ns) | 3.4 |
| Pd - Power Dissipation: | 50 W |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 9.2 ns |
| Typical Turn-Off Delay Time: | 17 ns |
| Id - Continuous Drain Current: | 21 A, 78 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 3600 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 23 |
| Typical Gate Charge @ Vgs (nC) | 11@4.5V|23@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 530 |
| Typical Turn-On Delay Time (ns) | 9.2 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 42 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 3.7 mOhms |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 21 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 1300@25V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Maximum Drain Source Resistance (mOhm) | 4.5@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 396 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 42 |