NVMFD5C446NLT1G, Trans MOSFET N-CH 40V 25A Automotive AEC-Q101 8-Pin DFN EP T/R
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- Код товара
- 8002313168
- Артикул
- NVMFD5C446NLT1G
- Бренд
- ON Semiconductor***
- PPAP
- Yes
- Width
- 5.1mm
- Brand:
- onsemi
- Series
- NVMFD5C446NL
Цена по запросу
(от 450 ₽)
Минимальный заказ: 70 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 40V 25A Автомобильный AEC-Q101 с 8-контактным разъемом DFN EP T/R
Технические параметры
| PPAP | Yes |
| Width | 5.1mm |
| Brand: | onsemi |
| Series | NVMFD5C446NL |
| Series: | NVMFD5C446NL |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Fall Time: | 15.2 ns, 15.2 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 16.8 ns, 16.8 ns |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DFN |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Quad Drain |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SO-8FL-Dual-8 |
| Product Category | Power MOSFET |
| Supplier Package | DFN EP |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 54 nC |
| Структура | N-Channel |
| Automotive Standard | AEC-Q101 |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Typical Fall Time (ns) | 15.2 |
| Typical Rise Time (ns) | 16.8 |
| Особенности | автомобильные приложения |
| Pd - Power Dissipation: | 125 W |
| Maximum Power Dissipation | 125 W |
| Typical Gate Charge @ Vgs | 54 nC @ 10 V |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 14.8 ns, 14.8 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 34.9 ns, 34.9 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 145 A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 3500 |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 54 |
| Typical Gate Charge @ Vgs (nC) | 54@10V|25@4.5V |
| Forward Transconductance - Min: | 138 S, 138 S |
| Maximum Drain Source Resistance | 3.9 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 14.8 |
| Maximum Continuous Drain Current | 145 A |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 34.9 |
| Rds On - Drain-Source Resistance: | 2.2 mOhms, 2.2 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 25 |
| Typical Input Capacitance @ Vds (pF) | 3170@25V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Maximum Drain Source Resistance (mOhm) | 2.65@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 25 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 125 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |