NVJD4158CT1G, 270mW SC-88-6 MOSFETs ROHS
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- Код товара
- 8049253666
- Артикул
- NVJD4158CT1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 3.5 ns, 78 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 6.5 ns, 66 ns
Цена по запросу
(от 96 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 3.5 ns, 78 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 6.5 ns, 66 ns |
| Вес, г | 0.06 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | SC-88-6 |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 900 pC, 2.2 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 270 mW |
| Typical Turn-On Delay Time: | 5.8 ns, 15 ns |
| Typical Turn-Off Delay Time: | 13.5 ns, 56 ns |
| Id - Continuous Drain Current: | 250 mA, 880 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.08 S, 3 S |
| Vgs th - Gate-Source Threshold Voltage: | 610 mV, 1.2 V |