NVH4L040N120M3S, TO-247-4L MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044731451
- Артикул
- NVH4L040N120M3S
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 5.94 ns
- Packaging:
- Tube
- Rise Time:
- 4.78 ns
Цена по запросу
(от 2 951,02 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 5.94 ns |
| Packaging: | Tube |
| Rise Time: | 4.78 ns |
| Вес, г | 9.02 |
| Technology: | SiC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-4L |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 75.2 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 235 W |
| Vgs - Gate-Source Voltage: | -8 V, +22 V |
| Typical Turn-On Delay Time: | 13.8 ns |
| Typical Turn-Off Delay Time: | 26.5 ns |
| Id - Continuous Drain Current: | 44 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 18.7 S |
| Rds On - Drain-Source Resistance: | 40.8 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 3.22 V |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |