NVF6P02T3G,Power MOSFET, P Channel, 20 V, 10 A, 0.044 ohm, SOT-223, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8000247455
- Артикул
- NVF6P02T3G
- Бренд
- ON Semiconductor***
- Width
- 3.7mm
- Brand:
- onsemi
- Pin Count
- 3
- Fall Time:
- 60 ns
Цена по запросу
(от 216 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Width | 3.7mm |
| Brand: | onsemi |
| Pin Count | 3 |
| Fall Time: | 60 ns |
| Rise Time: | 30 ns |
| Вес, г | 0.342 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Корпус | SOT-223 |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.7 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 4000 |
| Особенности | - |
| Pd - Power Dissipation: | 8.3 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 8.3 W |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 60 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 10 A |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 70 mΩ |
| Maximum Continuous Drain Current | 8.4 A |
| Rds On - Drain-Source Resistance: | 44 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 10 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±10В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.044 Ом |