NVF5P03T3G, MOSFETs AUTOMOTIVE MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004739273
- Артикул
- NVF5P03T3G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Series:
- NTF5P03
- Fall Time:
- 10 ns
- Rise Time:
- 33 ns
Цена по запросу
(от 106,76 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Series: | NTF5P03 |
| Fall Time: | 10 ns |
| Rise Time: | 33 ns |
| Вес, г | 0.25 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | SOT-223-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Особенности | автомобильные приложения |
| Pd - Power Dissipation: | 3.13 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 38 ns |
| Id - Continuous Drain Current: | 5.2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 3.9 S |
| Rds On - Drain-Source Resistance: | 107 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.75 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |