NVF2955T1G, Транзистор P-МОП, полевой, -60В, -2,6А, 2,3Вт, SOT223
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8042953632
- Артикул
- NVF2955T1G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- Yes
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 124,34 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОП, полевой, -60В, -2,6А, 2,3Вт, SOT223 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 0.12 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| Product Category | Power MOSFET |
| Supplier Package | SOT-223 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS 7 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 38 |
| Typical Rise Time (ns) | 7.6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2300 |
| Typical Gate Charge @ 10V (nC) | 14.3 |
| Typical Gate Charge @ Vgs (nC) | 14.3@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 165 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 4.2 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Typical Diode Forward Voltage (V) | 1.1 |
| Typical Gate to Drain Charge (nC) | 5.2 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 2.3 |
| Typical Reverse Recovery Time (ns) | 36 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.6 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 492@25V |
| Typical Reverse Recovery Charge (nC) | 0.139 |
| Maximum Drain Source Resistance (mOhm) | 185@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 17 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.3 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 50@25V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 2.6 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 150 |