NVD5C688NLT4G, MOSFETs T6 60V LL DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006256044
- Артикул
- NVD5C688NLT4G
- Бренд
- ON Semiconductor***
- Case
- DPAK
- Width
- 6.22mm
- Series
- NVD5C688NL-D
- Mounting
- SMD
Цена по запросу
(от 196,64 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | DPAK |
| Width | 6.22mm |
| Series | NVD5C688NL-D |
| Mounting | SMD |
| Pin Count | 3 |
| Вес, г | 0.3 |
| Gate charge | 7nC |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ONSEMI |
| Package Type | DPAK(TO-252) |
| Polarisation | unipolar |
| Drain current | 12A |
| Mounting Type | Surface Mount |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Power dissipation | 9W |
| Type of transistor | N-MOSFET |
| Структура | MOSFET |
| Automotive Standard | AEC-Q101 |
| Gate-source voltage | ±16V |
| On-state resistance | 27.4mΩ |
| Drain-source voltage | 60V |
| Pulsed drain current | 77A |
| Forward Diode Voltage | 1.2V |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 18 W |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V |
| Maximum Gate Source Voltage | ±16 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 2.1V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Drain Source Resistance | 40 mΩ |
| Maximum Continuous Drain Current | 17 A |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |