NVD3055-150T4G-VF01, 60V 9A 150mOhm@4.5A,10V 4V@250uA 1 N-Channel DPAK-3 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061893585
- Артикул
- NVD3055-150T4G-VF01
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- Yes
- SVHC
- Yes
- Mounting
- Surface Mount
Цена по запросу
(от 93 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 9A Автомобильный AEC-Q101 3-контактный(2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 0.42 |
| PCB changed | 2 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 6.22(Max)mm |
| Package Length | 6.73(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 23 |
| Typical Rise Time (ns) | 37.1 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 28800 |
| Typical Gate Charge @ 10V (nC) | 7.1 |
| Typical Gate Charge @ Vgs (nC) | 7.1@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11.2 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 12.2 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Typical Input Capacitance @ Vds (pF) | 200@25V |
| Maximum Drain-Source Resistance (mOhm) | 150@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |