NTTFS4C05NTAG, 30V 75A 3.6mOhm@10V,75A 33W 2.2V@250uA 1 N-channel PDFN-8(3.3x3.3) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044373336
- Артикул
- NTTFS4C05NTAG
- Бренд
- ON Semiconductor***
- PPAP
- No
- SVHC
- Yes
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 71,16 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30 В 19,4 А с 8-контактным разъемом WDFN EP T/R
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.12 |
| PCB changed | 8 |
| Part Status | Active |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.05 mm |
| Package Length | 3.05 mm |
| Product Category | Power MOSFET |
| Supplier Package | WDFN EP |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | DFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 5|8 |
| Typical Rise Time (ns) | 30|25 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 4500 |
| Typical Gate Charge @ 10V (nC) | 31 |
| Typical Gate Charge @ Vgs (nC) | 14.5@4.5V|31@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 1224 |
| Typical Turn-On Delay Time (ns) | 11|8 |
| Maximum Drain-Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 3.1 |
| Typical Turn-Off Delay Time (ns) | 20|26 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Diode Forward Voltage (V) | 0.77 |
| Typical Gate to Drain Charge (nC) | 5.5 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Minimum Gate Threshold Voltage (V) | 1.3 |
| Typical Gate to Source Charge (nC) | 5.2 |
| Typical Reverse Recovery Time (ns) | 42.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1988@15V |
| Typical Reverse Recovery Charge (nC) | 34.4 |
| Maximum Drain-Source Resistance (mOhm) | 3.6@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 174 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 2.9@10V|4.1@4.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 33 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 71@15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 75 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 151.9 |