NTS4409NT1G, Транзистор: N-MOSFET, полевой, 25В, 0,75А, 0,28Вт, SOT323
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048524522
- Артикул
- NTS4409NT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type:
- MOSFET
- Brand:
- onsemi
- EU RoHS
- Compliant
Цена по запросу
(от 22 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 25В, 0,75А, 0,28Вт, SOT323 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Type: | MOSFET |
| Brand: | onsemi |
| EU RoHS | Compliant |
| Series: | NTS4409N |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signals |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 41 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 8.2 ns |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-70-3 |
| Product Category | Small Signal |
| Supplier Package | SC-70 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.2 nC |
| Process Technology | Planar |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 280mW |
| Typical Fall Time (ns) | 41 |
| Typical Rise Time (ns) | 8.2 |
| Pd - Power Dissipation: | 330 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 330 mW |
| Typical Gate Charge @ Vgs | 1.2 nC @ 4.5 V |
| Total Gate Charge (Qg@Vgs) | 1.5nC@4.5V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 5 ns |
| Input Capacitance (Ciss@Vds) | 60pF@10V |
| Maximum Drain Source Voltage | 25 V |
| Typical Turn-Off Delay Time: | 23 ns |
| Continuous Drain Current (Id) | 700mA |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 750 mA |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 330 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 1.2@4.5V |
| Forward Transconductance - Min: | 0.5 S |
| Maximum Drain Source Resistance | 400 mΩ |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 5 |
| Maximum Continuous Drain Current | 700 mA |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 23 |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.7 |
| Typical Input Capacitance @ Vds (pF) | 49@10V |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Maximum Drain Source Resistance (mOhm) | 350@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 650 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |